Method of selectively producing conductive members on a semicond

Details Method of selectively producing conductive members on a semicond Method of selectively producing conductive members on a semicond

1989-09-07

1991-06-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437177, 437192, 437193, H01L 2144

Patent

active

050213636

ABSTRACT:
Method of forming conductive members on a substrate of GaAs. Silicon is placed on the substrate surface in the desired pattern of the conductive members. The substrate is exposed to a gaseous atmosphere containing WF.sub.6. WF.sub.6 is reduced by the silicon causing tungsten to selectively deposit on the silicon but not on the exposed GaAs. The substrate is given a rapid thermal annealing treatment which causes the silicon-tungsten elements to form conductive members having a silicon rich layer at the bottom, an intermediate tungsten silicide layer, and a tungsten rich layer at the top. The conductive members form ohmic contacts with underlying heavily doped GaAs and rectifying Schottky barrier contacts with underlying lightly doped GaAs.

REFERENCES:
patent: 4586063 (1986-04-01), Nakamura et al.
patent: 4597167 (1986-07-01), Moriya et al.
patent: 4735913 (1988-04-01), Hayes
patent: 4751101 (1988-06-01), Joshi
patent: 4880753 (1989-11-01), Meakin et al.
patent: 4923823 (1990-05-01), Kohno
Wolf et al., Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, pp. 303-308.
Ghezzo et al., Selective CVD Tungsten on Silicon Implanted S.sub.i O.sub.2 J. Electrochem Sec. Solid State Science & Technology, Jul. 1988, pp. 1730-1734.
Tsao et al. Low Pressure Chemical Vapor Deposition of Tungsten on Polycrystellin and Single-Crystal Silicon Via the Silicon Reduction J. Electrochem. Soc. Solid State Science and Technology, Nov. 1984, pp. 2702-2708.
Lamai et al., Evaluation of the Selective Tungsten Deposition Process for VLSI Circuit Application, J. Electrochem. Sec. Solid State Science and Technology Apr. 1988, pp. 980-984.

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