Method of selectively making contact structures both with barrie

Details Method of selectively making contact structures both with barrie Method of selectively making contact structures both with barrie

1986-02-25

1987-10-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG140, 357 71, 437187, 437189, H01L 21425, H01L 2962

Patent

active

047004657

ABSTRACT:
A semiconductor structure with ohmic contacts and variable resistance contacts has an interconnection pattern to the contacts including a first barrier metal in contact with the variable resistance contacts and a second metal contacting the barrier metal and the ohmic contacts. The barrier layer protects the amorphotized crystalline structure of the variable resistance contacts. Fabrication processes are described.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 3900944 (1975-08-01), Fuller et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4498224 (1985-02-01), Maeguchi
patent: 4516313 (1985-05-01), Turi et al.

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