Method of selectively growing Si epitaxial film

Details Method of selectively growing Si epitaxial film Method of selectively growing Si epitaxial film

1994-07-22

1996-03-05

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

117 84, 117 92, C30B 2502

Patent

active

054958229

ABSTRACT:
In a method of selectively growing an Si epitaxial film, a gas consisting of not less than one type of a gas containing at least silane gas is used as a source gas. A substrate obtained by partially forming an insulating film pattern on a single-crystal Si substrate is heated to a predetermined temperature in a vacuum. An Si epitaxial film is grown on exposed single-crystal Si except for the insulating film pattern. Intermittent irradiation by vacuum ultraviolet light on the heated substrate is performed at predetermined time intervals.

REFERENCES:
patent: 4116751 (1978-09-01), Zaromb
patent: 4177321 (1979-12-01), Nishizawa
Hiroyuki Hirayama, Toru Tatsumi and Naoaki Aizaki, "Selective Growth Condition in Disilane Gas Source Silicon Molecular Beam Epitaxy", Appl. Phys. Lett., vol. 52, No. 26, 27, Jun. 1988, pp. 2242 and 2243.
H. Akazawa, Y. Utsumi, J. Takahashi and T. Urisu, "Photostimulated Evaporation of SiO2 Films by Synchrotron Radiation", Appl. Phys. Lett. vol. 57, No. 22, 26, Nov. 1990, pp. 2302-2304.
Y. Utsumi, H. Akazawa, M. Nagase T. Urisu and I. Kawashima, "Selective Growth in Synchrotron Radiation Excited Si Epitaxy", Appl. Phys. Lett., vol. 62, No. 14, 5, Apr. 1993, pp. (title page and) 1647-1649.

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