Method of selectively forming local interconnects using...

Details Method of selectively forming local interconnects using... Method of selectively forming local interconnects using...

2005-08-16

2005-08-16

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S063000, C438S597000, C438S598000, C257S758000

Reexamination Certificate

active

06930901

ABSTRACT:
The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.

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