Method of selectively forming atomically flat plane on...

Details Method of selectively forming atomically flat plane on... Method of selectively forming atomically flat plane on...

2011-08-02

2011-08-02

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C257S077000, C117S103000, C117S088000

Reexamination Certificate

active

07989260

ABSTRACT:
The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface.A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.

REFERENCES:
patent: 5160405 (1992-11-01), Miyauchi et al.
T. Makino et al., “Strong Excitonic Emission from (001)-Oriented Diamond P-N Junction”, Japanese Journal of Applied Physics., vol. 44, No. 38, pp. L1190-L1192, 2005.
H. Watanabe et al., “Homoepitaxial diamond film with an atomically flat surface over a large area”, Diamond and Related Materials, vol. 8, pp. 1272-1276, 1999.

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