Fishing – trapping – and vermin destroying
Patent
1988-08-23
1990-02-20
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437187, 437189, 437192, 437195, 148DIG19, 148DIG147, H01L 2100, H01L 2102, B05D 306, B05D 512
Patent
active
049026453
ABSTRACT:
A method of selectively forming (growing or depositing) a silicon-containing metal layer on an exposed surface of a semiconductor substrate or a conductor by using a metal halide gas and a silicon hydride gas at a ratio of a flow rate of the latter gas to that of the former gas (e.g., Si.sub.n H.sub.2n+2 /WF.sub.6) of 2 or less, and setting a growth temperature at 200.degree. C. or less. When a Si.sub.3 H.sub.8 gas and a WF.sub.6 gas, in particular, are used at a ratio of the flow rates (Si.sub.3 H.sub.8 /WF.sub.6) of 1.0 or less, and the deposition temperature is set at 100.degree. C. to room temperature, a silicon-containing tungsten layer is selectively deposited (formed).
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Moriya, T., A Planar Metallization Process--Its Application to Tri-Level Aluminum Interconnection, pp. 550-553, IEDM 83.
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Ghandhi, S., VLSI Fabrication Principles, Chap. 11, pp. 585-587, Wiley & Sons, 1983.
Everhart B.
Fujitsu Limited
Hearn Brian E.
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