Method of selectively doping a semiconductor body

Details Method of selectively doping a semiconductor body Method of selectively doping a semiconductor body

1976-08-30

1977-06-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148189, H01L 21223

Patent

active

040295281

ABSTRACT:
A method of selectively doping a semiconductor body with aluminum impurities comprises the step of forming a layer of silicon dioxide which is thick enough so that during the diffusion a masking portion of aluminum oxide is formed therein. The aluminum oxide formed serves as a mask against the penetration of aluminum impurities through the remaining silicon dioxide therebelow.

REFERENCES:
patent: 3437533 (1969-04-01), Dingwall
patent: 3468017 (1969-09-01), Stacey et al.
patent: 3560280 (1971-02-01), Nishida
patent: 3562033 (1971-02-01), Jansen et al.
patent: 3589953 (1971-06-01), Traxler
patent: 3615945 (1971-10-01), Yokozawa
patent: 3681155 (1972-08-01), Elgan et al.
patent: 3798079 (1974-03-01), Chu
patent: 3997379 (1976-12-01), Rosnowski

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