Method of selectively annealing damaged doped regions

Details Method of selectively annealing damaged doped regions Method of selectively annealing damaged doped regions

1997-02-14

2000-03-21

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427527, 427555, 427559, 438514, 438530, 438565, 438770, 438776, 438778, 438795, C23C 1400, H01L 21263, B05D 306

Patent

active

060400196

ABSTRACT:
A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region.

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