Method of selective oxidation

Details Method of selective oxidation Method of selective oxidation

1998-07-31

2000-02-08

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438430, 438424, 438425, 438426, 438427, H01L 2176

Patent

active

060227893

ABSTRACT:
A method of selective oxidation includes forming a mask layer which includes a silicon oxide film pattern and a silicon nitride film pattern on an active region defined on silicon substrate, a forming a trench using the mask layer in an isolation region defined in the silicon substrate adjoining the active region, forming a buried silicon oxide film in the trench, forming a buried poly-silicon film on the buried silicon oxide film in the trench, converting the buried poly-silicon film to a field oxide film, and removing the mask layer. The occurrence of a bird's beak during selective oxidation of the silicon can be prevented.

REFERENCES:
patent: 5455194 (1995-10-01), Vasquez et al.
patent: 5472904 (1995-12-01), Figura et al.

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