Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-02-25
1977-01-25
Lovell, C.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29578, 148175, 148188, 357 30, 357 31, 357 59, 427 86, H01L 21205, H01L 3114
Patent
active
040049540
ABSTRACT:
An array of microcrystalline silicon pads for a vidicon target is selectively grown, by the hydrogen reduction of silicon tetrachloride, along surface portions of a silicon wafer exposed through openings in an overlying silicon dioxide layer. The method disclosed avoids the spurious irregular growth of silicon on the silicon dioxide layer between the adjacent silicon pads.
REFERENCES:
patent: 3265542 (1966-08-01), Hirshon
patent: 3386857 (1968-06-01), Steinmaier
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3511702 (1970-05-01), Jackson et al.
patent: 3519901 (1970-07-01), Bean et al.
patent: 3548233 (1970-12-01), Cave et al.
patent: 3663319 (1972-05-01), Rose
patent: 3746908 (1973-07-01), Engeler
patent: 3884733 (1975-05-01), Bean
Dumin, D. J., "Selective Epitaxy using Silane and Germane" J. Crystal Growth, vol. 8, No. 1, 1971, pp. 33-36.
Rai-Choudhvry et al., "Selective Growth of Epitaxial Silicon and Gallium Arsenide" J. Electrochem. Soc., vol. 118, No. 1, Jan. 1971, pp. 107-110.
Blumenfeld et al., "Epicon Camera Tube; an Epitaxial Diode Array Vidicon" IEEE Trans. on Electron Devices, vol. ED-18, No. 11, Nov. 1971, pp. 1036-1042.
Edwards Thomas William
Tshudy Donald Richard
Boivin R. J.
Bruestle G. H.
Lovell C.
RCA Corporation
Saba W. G.
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