Method of selective aluminum diffusion

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148187, 148188, H01L 21223, H01L 21225

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active

040509672

ABSTRACT:
A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion.

REFERENCES:
patent: 3502517 (1970-03-01), Sussmann
patent: 3615936 (1971-10-01), Batz
patent: 3764413 (1973-10-01), Kakizaki et al.
patent: 3909926 (1975-10-01), Hutson
patent: 3928095 (1975-12-01), Harigaya et al.
patent: 3980507 (1976-09-01), Carley
patent: 3997379 (1976-12-01), Rosnowski

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