Method of selecting a memory cell in a magnetic random access me

Static information storage and retrieval – Read only systems – Magnetic

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365170, 365171, H01L 2178

Patent

active

057485194

ABSTRACT:
Improved methods for selecting memory cells in magnetic random access memory (MRAM) are provided. Whenever a state in a memory cell is sensed, a MRAM requires to adjust an output of comparator to a zero voltage (auto-zeroing step) before the content of memory cell is detected. This invention sequentially accesses memory cells 29-30 once sense line 25 is selected and auto-zeroed. Accordingly, a higher speed operation is attained because the invention does not require an auto-zeroing step every sensing a memory cell.

REFERENCES:
patent: 5361226 (1994-11-01), Taguchi et al.
patent: 5396455 (1995-03-01), Brady et al.
patent: 5477482 (1995-12-01), Prinz

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