Method of selected area doping of compound semiconductors

Details Method of selected area doping of compound semiconductors Method of selected area doping of compound semiconductors

1983-08-22

1984-09-11

Roy, Upendra

Metal working

Method of mechanical manufacture

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148175, 148 15, 156612, 357 91, H01L 21203, C23C 1308

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active

044701926

ABSTRACT:
A method is provided for selectively doping a compound semiconductor such as GaAs in situ by molecular beam epitaxy. The surface of the GaAs is coated with a thin layer of As by exposing it to an arsenic flux within a molecular beam epitaxy chamber. Selected areas of the surface are irradiated with a laser beam or a beam of photons, electrons, or ions in order to desorb As and form a mask of As on the surface. Dopant material such as tin is then deposited over the surface and As mask. The semiconductor is then heated to desorb the As mask while leaving the dopant in the unmasked areas. An epitaxial layer of GaAs is then grown over the surface by molecular beam epitaxy.

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patent: 4383872 (1983-05-01), Roberts
patent: 4392453 (1983-07-01), Luscher
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