Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-08-02
2011-08-02
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S126000, C438S127000, C257SE21499, C257SE21502
Reexamination Certificate
active
07989262
ABSTRACT:
Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity.
REFERENCES:
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 5270264 (1993-12-01), Andideh et al.
patent: 5279669 (1994-01-01), Lee
patent: 5292370 (1994-03-01), Tsai et al.
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5504026 (1996-04-01), Kung
patent: 5614055 (1997-03-01), Fairbairn et al.
patent: 5861344 (1999-01-01), Roberts et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5919548 (1999-07-01), Barron et al.
patent: 6012336 (2000-01-01), Eaton et al.
patent: 6051121 (2000-04-01), Givens et al.
patent: 6174820 (2001-01-01), Habermehl et al.
patent: 6174850 (2001-01-01), Michaud
patent: 6391150 (2002-05-01), Berger et al.
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 6395574 (2002-05-01), Benzel et al.
patent: 6635509 (2003-10-01), Ouellet
patent: 6861277 (2005-03-01), Monroe et al.
patent: 6936494 (2005-08-01), Cheung
patent: 7008812 (2006-03-01), Carley
patent: 7163896 (2007-01-01), Zhu et al.
patent: 7211525 (2007-05-01), Shanker et
patent: 7235281 (2007-06-01), Rusu et al.
patent: 7329586 (2008-02-01), Vellaikal et al.
patent: 7344996 (2008-03-01), Lang et al.
patent: 7648855 (2010-01-01), Gillot et al.
patent: 7648859 (2010-01-01), Robert
patent: 2001/0023991 (2001-09-01), Kakuhara
patent: 2002/0011645 (2002-01-01), Bertin et al.
patent: 2002/0064906 (2002-05-01), Enquist
patent: 2002/0193037 (2002-12-01), Hofmann et al.
patent: 2003/0001221 (2003-01-01), Fischer et al.
patent: 2003/0138986 (2003-07-01), Bruner
patent: 2003/0148550 (2003-08-01), Volant et al.
patent: 2003/0153116 (2003-08-01), Carley et al.
patent: 2004/0020782 (2004-02-01), Cohen et al.
patent: 2004/0157426 (2004-08-01), Ouellet et al.
patent: 2004/0159532 (2004-08-01), Tatic-Lucic et al.
patent: 2004/0166603 (2004-08-01), Carley
patent: 2004/0188785 (2004-09-01), Cunningham et al.
patent: 2004/0245588 (2004-12-01), Nikkel et al.
patent: 2005/0017313 (2005-01-01), Wan
patent: 2005/0037608 (2005-02-01), Andricacos et al.
patent: 2005/0164127 (2005-07-01), Reid et al.
patent: 2006/0108675 (2006-05-01), Colgan et al.
patent: 2006/0131501 (2006-06-01), Ikushima et al.
patent: 2006/0134825 (2006-06-01), DCamp et al.
patent: 2006/0220173 (2006-10-01), Gan et al.
patent: 2007/0235501 (2007-10-01), Heck
patent: 10056716 (2002-05-01), None
patent: 751546 (1997-01-01), None
patent: 783182 (1997-07-01), None
patent: 1041629 (2000-10-01), None
patent: 1433740 (2004-06-01), None
patent: 1450406 (2004-08-01), None
patent: 63-198378 (1988-08-01), None
patent: 63-307758 (1988-12-01), None
patent: 05-297413 (1993-11-01), None
patent: 09-257618 (1997-10-01), None
patent: 11-177067 (1999-07-01), None
patent: 2003-506871 (1999-07-01), None
patent: 2000-186931 (2000-07-01), None
patent: 2001-133703 (2001-05-01), None
patent: 2002-280470 (2002-09-01), None
patent: 2003-035874 (2003-02-01), None
patent: WO-97/07517 (1997-02-01), None
patent: WO-00/24021 (2000-04-01), None
patent: WO-00/33089 (2000-06-01), None
patent: WO-01/31664 (2001-05-01), None
patent: WO-01/56066 (2001-08-01), None
patent: WO-01/83363 (2001-11-01), None
patent: WO-01/92842 (2001-12-01), None
patent: WO-02/16150 (2002-02-01), None
patent: WO-02/063657 (2002-08-01), None
patent: WO-03/028059 (2003-04-01), None
patent: WO-03/069645 (2003-08-01), None
patent: WO-03/085719 (2003-10-01), None
patent: WO-2004/096696 (2004-11-01), None
patent: WO-2005/060002 (2005-06-01), None
patent: WO-2005/061376 (2005-07-01), None
patent: WO-2007/015097 (2007-02-01), None
patent: WO-2007/017672 (2007-02-01), None
patent: WO-2007/060414 (2007-05-01), None
patent: WO-2007/060416 (2007-05-01), None
Notification of Reasons for Rejection dated Feb. 17, 2009 for Japanese Patent Application No. 2006-546296 (CK004JP) and English translation thereof.
Notification of the First Office Action for Chinese Patent Application No. 200480039028.0 (CK004—China) dated Feb. 27, 2009.
Office Action for European Patent Application No. 04805944.8 dated Jun. 22, 2009 (CK004EP).
Chan, et al., “Comprehensive Static Characterization of Vertical Electrostatically Actuated Polysilicon Beams”, vol. 16, No. 4, Oct. 1999, pp. 58-65.
International Preliminary Report and Written Opinion for International Application No. PCT/GB2006/2959 dated Feb. 5, 2008.
International Preliminary Report and Written Opinion for International Application No. PCT/GB2006/004350 dated May 27, 2008.
International Preliminary Report and Written Opinion for International Application No. PCT/GB2006/004354 dated May 27, 2008.
International Preliminary Report on Patentability for International Application No. PCT/GB2004/005122 dated Nov. 16, 2005.
International Preliminary Report on Patentability for International Application No. PCT/GB2004/001773 dated Jun. 22, 2008.
International Search Report for International Application No. PCT/GB2006/004354 dated Mar. 12, 2007.
International Search Report for International Application No. PCT/GB2006/002959 dated Oct. 25, 2006.
International Search Report for International Application No. PCT/GB2006/004350 dated Mar. 12, 2007.
International Search Report for International Application No. PCT/GB2004/005122 dated Mar. 2, 2005.
International Search Report for International Application No. PCT/GB2004/001773 dated Sep. 6, 2004.
Mercado et al., “A mechanical approach to overcome RF MEMS switch stiction problem”, vol. conf. 53, dated May 27, 2003, pp. 377-384.
Written Opinion for International Application No. PCT/GB2004/001773 dated Sep. 6, 2004.
Written Opinion for International Application No. PCT/GB2004/005122 dated Feb. 28, 2005.
Zavracky et al., “Micromechanical Switches Fabricated Using Nickel Surface Micromachining”, Journal of Microelectromechanical Systems, IEEE Service Center, Piscataway, NJ, US, vol. 6, No. 1, dated Mar. 1997.
Liu et al. “Sealing of micro machined cavities using chemical vapour deposition methods: characterisation and optimisation”, J. MEMS, 8, pp. 135-145, 1999.
Park et al. Wafer-scale film encapsulation of micromachined accelerometers, The 12th Int. Conf. on Solid State Sensors, Actuators and Microsystems, Boston, Jun. 8-12, 2003 pp. 1903-1906.
Stahl et al. Thin film encapsulation of acceleration sensors using polysilicon sacrificial layers, The 12th Int. Conf. on Solid State Sensors, Actuators and Microsystems, Boston, Jun. 8-12, 2003 pp. 1899-1902.
Search report and written opinion for PCT/US2009/033927 (CK051PCT) dated Jan. 7, 2010.
Cavendish Kinetics Ltd.
Lee Hsien-Ming
Patterson & Sheridan LLP
LandOfFree
Method of sealing a cavity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of sealing a cavity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of sealing a cavity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2778037