Method of screening semiconductor device

Details Method of screening semiconductor device Method of screening semiconductor device

2006-09-12

2006-09-12

Karlsen, Ernest (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S754120

Reexamination Certificate

active

07106084

ABSTRACT:
A method of screening a semiconductor device comprises the steps of successively forming a gate insulation film (102) and a conductive film (104) on a silicon wafer (100) to provide a structure (106) and bringing the first voltage application terminal (110) into contact with the back of the structure and the second voltage application terminal (112) having a potential different from that of the first voltage application terminal (110) into contact with the surface of the conductive film (104) to thereby apply a stress voltage to the structure (106).

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patent: 5519334 (1996-05-01), Dawson
patent: 6119255 (2000-09-01), Akram
patent: 6525555 (2003-02-01), Khandros et al.
patent: 6933527 (2005-08-01), Isobe et al.
patent: 6029301 (1994-02-01), None

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