Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-07-05
2008-08-19
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Reexamination Certificate
active
07413964
ABSTRACT:
This invention provides methods for predictively revealing, in bulk silicon substrates, latent crystalline defects in bulk silicon substrates that become apparent only after subsequent processing, e.g., after processing during which multiple layers are split and lifted from the bulk substrates. Preferred predictive methods include a revealing heat treatment of bulk substrates conducted in a non-reducing atmosphere at a temperature in the range from approximately 500° C. to 1300° C. If desired, a further revealing heat treatment or defect enlargement step can be performed to enlarge defects revealed by the first revealing heat treatment.
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Search report from French priority application No. 0602786 dated Nov. 1, 2006.
Kononchuk Oleg
Maleville Christophe
Reynaud Patrick
Geyer Scott B.
S.O.I.Tec Silicon on Insulator Technologies
Stevenson Andre′
Winston & Strawn LLP
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