Method of repairing semiconductor memory

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371 21, G01R 3128, G11C 2900

Patent

active

046270531

ABSTRACT:
In a method of repairing a semiconductor memory device having spare lines, all possible solutions of remedy using spare lines or spare blocks are obtained based on the result of test for the device, and then the possible solutions are screened under conditions related to the quality and reliability of the device so as to determine the best solution.

REFERENCES:
patent: 4380811 (1983-04-01), Gotze et al.
patent: 4435754 (1984-03-01), Chow et al.
patent: 4460997 (1984-07-01), Harns
patent: 4460999 (1984-07-01), Schmidt
Smith et al., Laser Programmable Redundancy and Yield Improvement in a 64K DRAM, IEEE Journal of Solid-State Circuits, vol. SC-16, No. 5, Oct. 1981, pp. 506-514.
Hayasaka et al., Testing System for Redundant Memory, 1982 IEEE Test Conference, pp. 240-244.

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