Method of repairing an integrated electronic circuit using a...

Semiconductor device manufacturing: process – Repair or restoration

Reexamination Certificate

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C438S013000

Reexamination Certificate

active

07029927

ABSTRACT:
A method of repairing a defect in an integrated electronic circuit caused by an incorrect lithographic mask includes the formation of an electrical isolation between two conducting parts of the circuit. The electrical isolation is obtained by at least partly filling, with an electrically insulating material, a volume hollowed out beforehand which would otherwise, and incorrectly, form an electrical connection between the two conducting parts. To do this, a mask having an aperture revealing the hollowed out volume is formed on the circuit, and the mask used to direct the filling of the electrically insulating material and correction of the lithography defined defect.

REFERENCES:
patent: 4466992 (1984-08-01), Dreiling
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5089426 (1992-02-01), Yamazaki
patent: 5230970 (1993-07-01), Atwood et al.
patent: 2001/0012689 (2001-08-01), Okoroanyanwu
patent: 2001/0035920 (2001-11-01), Choi
patent: 2002/0155722 (2002-10-01), Satta
Lee, et al, “Monte Carlo simulation of energy dissipation in electron beam lithography including secondary electron generation”, Journal of Applied Physics. vol. 67, No. 12, Jun. 15, 1990; pp. 7560-7567.
French Search Report, FR 0301937, dated Nov. 7, 2003.

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