Method of rendering the impurity concentration of a semiconducto

Details Method of rendering the impurity concentration of a semiconducto Method of rendering the impurity concentration of a semiconducto

1990-09-07

1992-07-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437946, 437161, 148DIG174, 148DIG15, H01L 21265

Patent

active

051302616

ABSTRACT:
According to this invention, there is provided to a method of manufacturing semiconductor devices including the steps of ion-implanting at least one impurity selected from As, P, Sb, Si, B, Ga, and Al in a wafer prior to a predetermined manufactural process of semiconductor devices in the semiconductor wafer grown by the Czochralski technique, and thereafter annealing the wafer at a temperature of at least 900.degree. C. Nonuniformity of an impurity concentration of the wafer can be improved. The difference in characteristics among the semiconductor devices manufactured in the wafer is decreased, a product yield can be increased, and the quality of the semiconductor devices can be improved.

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