Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1999-01-19
2000-09-19
Tsai, Jey
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438462, 438685, 438738, 257797, 430313, 430317, H01L 2176, H01L 21301, H01L 2144, H01L 23544, G03C 500
Patent
active
061211117
ABSTRACT:
A method is described for removing residual metal, such as tungsten, from the edge region of a wafer. After tungsten is deposited on a wafer to fill via holes in a dielectric the wafer is planarized using Chemical Mechanical Polishing, CMP. The CMP does not remove the tungsten from the edge of the wafer. After conductor metals for a layer of conducting electrodes has been deposited a layer of photoresist is formed on the wafer and patterned to clear the metals from over the alignment marks. This photoresist is then removed from the edge region of the wafer. The residual metals are then etched away from the edge region of the wafer using the remaining photoresist as a mask during the same etching step used to remove metals from the alignment marks or during a separate etching step. In one embodiment the alignment marks and laser marks are relocated to the edge region of the wafer and the residual metals are etched away from the edge region of the wafer during the same etching step used to remove metals from the alignment marks and laser marks.
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Jang Syun-Ming
Jeng Shwangming
Yu Chen-Hua
Ackerman Stephen B.
Nguyen Ha Tran
Prescott Larry J.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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