Method of removing thin film layers of a semiconductor component

Details Method of removing thin film layers of a semiconductor component Method of removing thin film layers of a semiconductor component

1997-09-19

1999-07-20

Picardat, Kevin M.

Semiconductor device manufacturing: process

Repair or restoration

438 12, 438 17, H01L 2100

Patent

active

059266880

ABSTRACT:
A method of removing thin film layers of a semiconductor component suitable for exposing a defective thin film layer for failure analysis. A focused ion beam is used instead of conventional mechanical polishing in non-selectively etching the thin film layers above a defective thin film layer in a semiconductor component. The focused ion beam has a better control over the etching thickness, so that a higher sample point success rate is obtained from a test specimen. Processing time is saved using the focused ion beam, which requires only a few minutes compared with hours needed by the conventional mechanical polishing method. The focused ion beam performs localized etching only, so that the thin film layers of other sample points in the test specimen will be unaffected. Therefore, a number of sample points can be prepared on the same test specimen at the same time.

REFERENCES:
patent: 4729970 (1988-03-01), Nath et al.
patent: 5326709 (1994-07-01), Moon et al.
patent: 5705411 (1998-01-01), Yamanobe et al.
patent: 5741727 (1998-04-01), Wang

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