Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1997-03-11
1999-04-27
Utech, Benjamin
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
216 89, 438693, H01L 21302, B08B 600
Patent
active
058968709
ABSTRACT:
Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the Chemical Mechanical Polish (CMP) process to dissolve the slurry and etch the abrasive particles.
REFERENCES:
patent: 3728154 (1973-04-01), Suzuki
patent: 4050954 (1977-09-01), Basi
patent: 4932168 (1990-06-01), Tada et al.
patent: 4968381 (1990-11-01), Prigge et al.
patent: 5176756 (1993-01-01), Nakashima et al.
patent: 5320706 (1994-06-01), Blackwell
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5391511 (1995-02-01), Doan et al.
patent: 5456758 (1995-10-01), Menon
patent: 5478436 (1995-12-01), Winebarger et al.
Huynh Cuc K.
Linde Harold G.
Marmillion Patricia E.
Palagonia Anthony M.
Pierson Bernadette A.
Goudreau George
International Business Machines - Corporation
Utech Benjamin
Walter, Jr. Howard J.
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