Method of removing sharp edges in a dielectric coating located a

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437228, 437246, H01L 2144

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active

055653812

ABSTRACT:
This disclosure is directed to a method of producing a smooth surface for a dielectric coating that is located above the surface of a semiconductor substrate containing doped regions of a semiconductor device. Sharp edges formed in the dielectric coating during certain semiconductor processing steps are removed using a deposition process to deposit a separate insulating layer on the dielectric coating containing the sharp edges followed by an annealing operation and the subsequent removal of the separate insulating layer to permit the subsequent formation of electrodes on a smooth surface of the dielectric coating.

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patent: 5229325 (1993-07-01), Park et al.
patent: 5269880 (1993-12-01), Jolley et al.
patent: 5369302 (1994-11-01), Chen et al.

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