Method of removing residual wax from silicon wafer polishing pla

Details Method of removing residual wax from silicon wafer polishing pla Method of removing residual wax from silicon wafer polishing pla

1998-09-04

1999-07-13

El-Arini, Zeinab

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 2, 134 13, 134 5, 134 29, 134 40, 134 254, 252 795, B08B 100, B08B 312, C09K 1302, C23G 114

Patent

active

059221356

ABSTRACT:
A process for removing waxes from silicon wafer polishing plates is provided. The process includes the steps of providing submersion baths of an alkali soap, de-ionized rinse water, sodium hydroxide, and additional de-ionized rinse water, in which polishing plates are exposed. The process eliminates the use of methylene chloride from the process.

REFERENCES:
patent: 4721549 (1988-01-01), Bogenschutz et al.
patent: 4867843 (1989-09-01), Ikeda et al.
patent: 5209785 (1993-05-01), Brewe et al.
patent: 5350487 (1994-09-01), Ameen et al.

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