Method of removing residual contaminants in an alignment mark af

Details Method of removing residual contaminants in an alignment mark af Method of removing residual contaminants in an alignment mark af

1997-07-21

2000-05-02

Nelms, David

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438692, H01L 214763

Patent

active

060572485

ABSTRACT:
A method of removing residual contaminants in grooves of an alignment mark of a semiconductor wafer after a chemical-mechanical polishing is disclosed. The method includes scrubbing the semiconductor wafer using conventional scrubbing technique. Next, the semiconductor wafer is etched back to remove a damaged layer, which is formed during the chemical-mechanical polishing, over the semiconductor wafer. Finally, the semiconductor wafer is cleaned, for example, by NH.sub.4 OH/H.sub.2 O.sub.2 /DI, agitated by a megasonic source, thereby substantially removing the residual contaminants from the alignment mark.

REFERENCES:
patent: 5271798 (1993-12-01), Sandhu et al.
patent: 5789360 (1998-08-01), Song et al.

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