Method of removing photoresist film

Details Method of removing photoresist film Method of removing photoresist film

1995-07-07

1997-10-28

Dang, Thi

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching using radiation

216 83, 252 792, 252 791, 134 1, G03C 1100

Patent

active

056814879

ABSTRACT:
The present invention provides a method of removing a photoresist film, which exhibits the high ability to remove photoresist and excellent safety and handling properties such as workability, In the removing method, the photoresist film is removed by chemical decomposition in an inorganic aqueous solution under ultraviolet-light irradiation. The inorganic aqueous solution is an aqueous solution of peroxomonosulfate or an aqueous solution containing 4.5 to 36 wt % of sulfuric acid and 0.05 to 0.8 wt % of hydrogen peroxide.

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patent: 5068040 (1991-11-01), Jackson
patent: 5269850 (1993-12-01), Jackson
patent: 5464480 (1995-11-01), Matthews

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