Method of removing PECVD residues of fluorinated plasma...

Details Method of removing PECVD residues of fluorinated plasma... Method of removing PECVD residues of fluorinated plasma...

2006-12-19

2006-12-19

Markoff, Alexander (Department: 1746)

Cleaning and liquid contact with solids

Processes

Combined

C134S001100, C134S022180, C134S030000, C438S905000

Reexamination Certificate

active

07150796

ABSTRACT:
In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the fluorinated discharges without opening the chamber and without causing chamber downtime, comprising:a) maximizing H-atom concentration in a gas mix of a plasma containing H2through the use of high rf power and low pressure to obtain an in-situ H2plasma; andb) subjecting a reactor chamber containing build-up residues from previous chamber treatment with a fluorinated plasma, with the in-situ H2plasma from step a) without opening the chamber and without shutting down the chamber to remove the build-up residues of the fluorinated plasma.

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