Semiconductor device manufacturing: process – Gettering of substrate – By layers which are coated – contacted – or diffused
Patent
1997-07-30
1998-05-19
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Gettering of substrate
By layers which are coated, contacted, or diffused
438906, 438310, H01L 21322
Patent
active
057535639
ABSTRACT:
The removal of particulate contaminants, such as dust particles, from the surface of a semiconductor wafer is achieved by pressing a soft adhesive layer against the wafer surface, leaving it in place for a short time and then removing it. The adhesive is brought to the wafer surface on a flexible medium which serves as a backing layer and to whose other side pressure can be applied. To remove the adhesive, the backing layer is peeled off, either by pulling on one end or by passing a sticky roller over it. The operation may be performed in air or under vacuum.
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Guan Yong Yang
Lim Edward Hock Vui
Ackerman Stephen B.
Bowers Jr. Charles L.
Chartered Semiconductor Manufacturing Ltd.
Gurley Lynne A.
Saile George O.
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