Chemistry of inorganic compounds – Modifying or removing component of normally gaseous mixture – Molecular oxygen or ozone component
Patent
1993-03-22
1994-08-23
Straub, Gary P.
Chemistry of inorganic compounds
Modifying or removing component of normally gaseous mixture
Molecular oxygen or ozone component
423579, 4235801, 502 3, 502407, 2521815, 252194, 2521816, C01B 1300
Patent
active
053405536
ABSTRACT:
A method is provided for removing residual amounts of oxygen and water vapor from the controlled atmosphere of an enclosed chamber. A small volume of high-purity silicon is heated in a crucible placed inside the chamber. The silicon is typically heated with a power source separate from that used for heating the chamber and its primary contents. The heated silicon functions as an effective oxygen getter for removing residual oxygen and water vapor from the controlled atmosphere before and/or during a process conducted in the chamber. Heating the silicon to a molten state can induce beneficial convective stirring that keeps the silicon surface fresh for effective, efficient, and continuous capturing of oxygen.
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"Vapor Deposition of Silicon Dioxide" by D K Seto et al; IBM Technical Disclosure Bulletin vol. 9 No. 7 Dec. 1966.
McFarren John C.
Rockwell International Corporation
Straub Gary P.
Vanoy Timothy C.
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