Semiconductor device manufacturing: process – Gettering of substrate
Patent
1997-07-16
1999-10-19
Niebling, John F.
Semiconductor device manufacturing: process
Gettering of substrate
438162, 438143, 438473, 438476, 438402, 257629, 257635, H01L 21322
Patent
active
059703660
ABSTRACT:
In a method of forming a silicon substrate, a gettering film is formed on a bottom surface of a silicon substrate. An oxygen ion implantation into a top surface of the silicon substrate is carried out at a substrate temperature in the range of 400.degree. C.-700.degree. C. The gettering film is removed from the silicon substrate. The silicon substrate is subjected to a heat treatment at a temperature of not less than 1300.degree. C. for causing a reaction of oxygen and silicon to form a silicon oxide film in the silicon substrate after the gettering film is removed.
REFERENCES:
patent: 5138421 (1992-08-01), Saito
patent: 5244819 (1993-09-01), Yue
patent: 5441899 (1995-08-01), Nakai et al.
patent: 5616507 (1997-04-01), Nakai et al.
patent: 5721145 (1998-02-01), Kusakabe et al.
patent: 5773152 (1998-06-01), Okonogi
K. Watanabe et al., "Possible causes of trace metallic contaminants in SIMOX and BESOI substrates", pp. 95-96, IEEE International SOI Conference, Oct. 1994.
J. Stoemenos et al., "Mechanisms of SIMOX synthesis and related microstructural properties", pp. 16-27, NEC ULSI, 1997.
Gurley Lynne A.
NEC Corporation
Niebling John F.
LandOfFree
Method of removing metallic contaminants from simox substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of removing metallic contaminants from simox substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of removing metallic contaminants from simox substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2068636