Method of removing metal etching residues following a metal...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S691000, C438S697000, C438S706000, C134S001200

Reexamination Certificate

active

06936544

ABSTRACT:
A method for reducing wafer surface scratching in a metal CMP process including providing a semiconductor wafer having a process surface comprising a blanket deposited metal layer; dry etching in an etchback process comprising a fluorine containing etching chemistry to remove at least a portion of the metal layer forming a metal and fluorine containing etching residue at the process surface; cleaning the process surface with a hydrofluoric acid (HF) containing cleaning solution; and carrying out a subsequent metal chemical mechanical polishing (CMP) process.

REFERENCES:
patent: 5904560 (1999-05-01), Brumley
patent: 6143658 (2000-11-01), Donnelly et al.
patent: 6187684 (2001-02-01), Farber et al.
patent: 6214688 (2001-04-01), Hwang et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 6780785 (2004-08-01), Hsieh

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of removing metal etching residues following a metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of removing metal etching residues following a metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of removing metal etching residues following a metal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3463936

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.