Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-08-30
2005-08-30
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S697000, C438S706000, C134S001200
Reexamination Certificate
active
06936544
ABSTRACT:
A method for reducing wafer surface scratching in a metal CMP process including providing a semiconductor wafer having a process surface comprising a blanket deposited metal layer; dry etching in an etchback process comprising a fluorine containing etching chemistry to remove at least a portion of the metal layer forming a metal and fluorine containing etching residue at the process surface; cleaning the process surface with a hydrofluoric acid (HF) containing cleaning solution; and carrying out a subsequent metal chemical mechanical polishing (CMP) process.
REFERENCES:
patent: 5904560 (1999-05-01), Brumley
patent: 6143658 (2000-11-01), Donnelly et al.
patent: 6187684 (2001-02-01), Farber et al.
patent: 6214688 (2001-04-01), Hwang et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6635528 (2003-10-01), Gilbert et al.
patent: 6780785 (2004-08-01), Hsieh
Fan Yuh-Da
Huang Yai-Yei
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
Vinh Lan
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