Method of removing ion implanted photoresist

Details Method of removing ion implanted photoresist Method of removing ion implanted photoresist

2006-12-28

2008-08-12

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S746000, C134S001000, C134S001300

Reexamination Certificate

active

07410909

ABSTRACT:
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.

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