Method of removing impurity metals from semiconductor devices

Details Method of removing impurity metals from semiconductor devices Method of removing impurity metals from semiconductor devices

1979-05-25

1980-11-04

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 148191, 357 91, H01L 21322, H01L 21324

Patent

active

042318092

ABSTRACT:
A process is disclosed for gettering deleterious metal impurities, particularly the transition metals such as Cu, Fe, Co, Ni and Cr from silicon wafers by high temperature treatment for a comparatively short time in a hydrogen chloride vapor at low oxygen pressure. The low oxygen pressure inhibits the oxide growth on the silicon surfaces to thicknesses of not more than about 150 Angstroms, sufficient to protect the silicon surface but not so thick as to constitute a barrier to outdiffusion of the gettered impurities. This particular process may be preceded and followed by other previously known gettering techniques.

REFERENCES:
patent: 3320103 (1967-05-01), Drake et al.
patent: 3556879 (1971-01-01), Mayer
patent: 3929529 (1975-12-01), Poponiak
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4042419 (1977-08-01), Heinke et al.
patent: 4069068 (1978-01-01), Beyer et al.
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4131487 (1978-12-01), Pearce et al.
patent: 4149905 (1979-04-01), Levinstein et al.
Rijks et al., J. Appl. Phys., 50 (Mar. 1979), 1370-1380.
Seidel et al., "Transistors . . . Annealed in . . . Oxygen . . . ", IEEE, vol. ED-24, (1977), 717.
Beyer et al., "Ion Implantation Gettering . . . ", IBM-TDB, 20 (1978), 3122.
Shiraki, "S. F. Generation Suppression . . . HCl Oxidation", Jap. J. Appl. Phys., 15 (1976), 1.
Poponiak et al., "Gettering . . . Epitaxial Layer", IBM-TDB, 19 (1976), 2052.
Rozgonyi et al., "Interstitial Oxygen Gettering . . . ", Appl. Phys. Letts., 31 (1977), 343.
Hu, ". . . Oxidation S. F. in Si", Appl. Phys. Letts., 27 (1975), 165.

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