Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-05-24
2005-05-24
Kielin, Erik J. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S443000, C438S697000
Reexamination Certificate
active
06897121
ABSTRACT:
A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.
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Chang Han-Maou
Chia-Chih Ma
Lee H. Wally
Lian Nan-Tzu
Liu Hsin-Cheng
Blum David S
Kielin Erik J.
Macronix International Co. Ltd.
Rabin & Berdo PC
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