Method of removing excess material, for repairing phase-shifting

Details Method of removing excess material, for repairing phase-shifting Method of removing excess material, for repairing phase-shifting

1991-09-20

1993-09-21

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

430 5, 430322, G03F 900

Patent

active

052467996

ABSTRACT:
A defect in the form of excess material, located in a trench region at a major surface of a phase-shifting mask, is removed by spinning on the major surface a planarization layer for which dry-etching conditions exist at which it anisotropically etches at the same rate as that of the excess material. Then the planarization layer is dry-etched under those conditions, using a patterned protective masking layer, such as chrome, having an aperture overlying the defect in the trench. This aperture need not be precisely laterally aligned with the defect (unless the defect extends to an edge of the trench). A plurality of such defects can be simultaneously removed. Likewise, defects located on plateau regions of the mask can be repaired.

REFERENCES:
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5085957 (1992-02-01), Hosono
Cambria, T. D. et al., Solid State Technology, "Mask and Circuit Repair with Focused-Ion Beams", pp. 133-136, Sep. 1987.

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