Method of removing electric charge accumulated on a semiconducto

Details Method of removing electric charge accumulated on a semiconducto Method of removing electric charge accumulated on a semiconducto

1992-11-13

1994-02-15

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, 250251, H01V 37317

Patent

active

052869784

ABSTRACT:
A method of removing electric charges accumulated on a semiconductor substrate during ion implantation by irradiating a highly accelerated electron beam with an acceleration energy of 1 to 50 KeV into the portion of the substrate irradiated with ion beams. The so-formed electron beam induced current eliminates the electric charges.

REFERENCES:
patent: 4639301 (1989-06-01), Doherty et al.
patent: 4939360 (1990-07-01), Sakai
Patent Abstracts Of Japan, vol. 13, No. 534 (E-852) 29 Nov. 1989 of JP-A-1 220 350.

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