Method of removing damaged crystal regions from silicon wafers

Electric heating – Metal heating – For bonding with pressure

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216 99, 438691, 438747, 438749, 134 13, 134 3, B44C 122

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active

059118890

ABSTRACT:
A method is provided to remove crystal regions from silicon wafers which are damaged as a consequence of mechanical machining of the silicon wafers. The silicon wafers are pretreated with an aqueous solution containing hydrogen fluoride. Then the wafers are etched in an aqueous solution exposed to ultrasound and containing alkali metal hydroxide at temperatures from 55.degree. C. to 95.degree. C.

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