Electric heating – Metal heating – For bonding with pressure
Patent
1996-04-08
1999-06-15
Codd, Bernard
Electric heating
Metal heating
For bonding with pressure
216 99, 438691, 438747, 438749, 134 13, 134 3, B44C 122
Patent
active
059118890
ABSTRACT:
A method is provided to remove crystal regions from silicon wafers which are damaged as a consequence of mechanical machining of the silicon wafers. The silicon wafers are pretreated with an aqueous solution containing hydrogen fluoride. Then the wafers are etched in an aqueous solution exposed to ultrasound and containing alkali metal hydroxide at temperatures from 55.degree. C. to 95.degree. C.
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Fabry Laszlo
Passer Bernd
Steiger Edeltraud
Codd Bernard
Wacker Siltronic Gesellschaft fur Halbleitermaterialien
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