Method of removing an inorganic antireflective coating from a se

Details Method of removing an inorganic antireflective coating from a se Method of removing an inorganic antireflective coating from a se

1997-06-18

1999-03-16

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438756, 216 40, 216 90, H01L 2100

Patent

active

058830111

ABSTRACT:
A method of removing an inorganic antireflective coating from a semiconductor substrate and a method of forming an integrated circuit (IC) are provided. In the former method, a sacrificial layer is formed over a semiconductor substrate, the layer being selectively removable from the substrate and compatible with photolithography. An inorganic antireflective coating such as SiON is then formed over the sacrificial layer. Thereafter, the sacrificial layer is removed from the substrate to lift the coating off the substrate. Preferred materials for the sacrificial layer include TiN, tetraethyl orthosilicate-based silicon oxide, spin-on-glass (SOG) such as hydrogen silsesquioxane and methyl silsesquioxane, and porous polymeric materials. In the latter method, a patterned layer of photoresist material is formed over the anitreflective coating. The portions of the antireflective coating, the sacrificial layer, and the semiconductor substrate which are not covered by the patterned layer of photoresist material are then removed to define features of an IC. After the patterning of IC features, the sacrificial layer is removed from the IC features to lift the antireflective coating off such features. IC devices formed in accordance with these methods also are provided.

REFERENCES:
patent: 4420365 (1983-12-01), Lehrer
patent: 4606931 (1986-08-01), Olsen et al.
patent: 5126289 (1992-06-01), Ziger
patent: 5214001 (1993-05-01), Ipposhi et al.

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