Method of reliably manufacturing a semiconductor device having a

Details Method of reliably manufacturing a semiconductor device having a Method of reliably manufacturing a semiconductor device having a

1995-06-29

1996-09-24

Quach, T. N.

Fishing, trapping, and vermin destroying

437790, 437792, 437200, H01L 21283

Patent

active

055590470

ABSTRACT:
In manufacturing a semiconductor device, an insulator layer is formed on a semiconductor substrate. A polycrystal silicon layer is formed on an upper insulator surface of the insulator layer to have a first upper surface leaving a surrounding area of the upper insulator surface. The polycrystal silicon layer has impurities which are doped in the polycrystal silicon layer. A titanium silicide nitride layer is formed on the first upper surface. A titanium silicide layer is formed on the titanium silicide nitride layer.

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patent: 5066615 (1991-11-01), Brady et al.
patent: 5164333 (1992-11-01), Schwalke et al.
patent: 5252518 (1993-10-01), Sandhu et al.
patent: 5364803 (1994-11-01), Lur et al.

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