Method of reliably and readily manufacturing a semiconductor dev

Fishing – trapping – and vermin destroying

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437 60, 437919, H01L 2700, H01L 2170

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active

054380103

ABSTRACT:
In a method of manufacturing a semiconductor device with a cylindrical electrode (64) by partially deleting an electrode-forming film (61) which is formed to cover a block (58a) and has a specific film portion, a covering film (62) is formed at first to cover the electrode-forming film. The electrode-forming film is made of one of a conductive material and a semiconductive material. Next, the covering film is etched so that the covering film has a particular film portion which is unetched to form a protective wall (63) covering the specific film portion. Subsequently, the electro-deforming film is etched with the block and the particular film portion preventing the specific film portion from being etched. As a result, the cylindrical electrode is formed by the specific film portion that is unetched. Thereafter, the block and the particular film portion are removed.

REFERENCES:
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5266512 (1993-11-01), Kirsch
Patent Abstracts of Japan, JP 3057262, May 28, 1991.
Patent Abstracts of Japan, JP 3079072, Jun. 26, 1991.
Patent Abstracts of Japan, JP 3091957, Jul. 11 1991.
Patent Abstracts of Japan, JP 4264767, Jan. 29, 1993.
Patent Abstracts of Japan, JP 4212449, Nov. 27, 1992.

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