Method of relaxing a stressed film by melting an interface layer

Details Method of relaxing a stressed film by melting an interface layer Method of relaxing a stressed film by melting an interface layer

1997-12-09

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 47, 438938, 438483, 438486, H01L 2100, H01L 2120, H01L 2136

Patent

active

061071137

ABSTRACT:
The present invention relates to the technological field of manufacturing semiconductor materials for optoelectronic and microelectronic components, and it relates specifically to the method of making stacks of metamorphic layers of materials having lattice mismatches of several percent between one another or relative to the substrate.

REFERENCES:
patent: 4529455 (1985-07-01), Bean et al.
patent: 4963949 (1990-10-01), Wanlass et al.
patent: 5063166 (1991-11-01), Mooney et al.
patent: 5225368 (1993-07-01), Dodson
patent: 5451552 (1995-09-01), Miles et al.
Kadoiwa K et al., Study of Initial Buffer Layer in Gaas-on-Si Growth, Journal of Crystal Growth, vol. 115, No. 1/04, Dec. 2, 1991, pp. 128-132.

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