Method of reduction of a compound forming a layer on a substrate

Details Method of reduction of a compound forming a layer on a substrate Method of reduction of a compound forming a layer on a substrate

1983-06-23

1985-06-11

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29570, 204192SP, 204192S, 204192D, 252 623GA, 427 87, H01L 2120, H01L 2131

Patent

active

045219516

ABSTRACT:
The method of reduction comprises two successive steps. The first step consists in forming an electrolyte layer at the surface of the layer to be reduced which is an oxidized surface layer of a substrate. During the second step, the layer is reduced through the layer of electrolyte which is an ionic conductor for the ionizing species. The second step is carried out in a first variant by thermal reduction in a reducing atmosphere and in a second variant by exposure to a reducing plasma.

REFERENCES:
patent: 3522103 (1970-07-01), White et al.
patent: 3532627 (1970-10-01), Mitoff et al.
patent: 3943014 (1976-03-01), Yoshizawa
patent: 4218527 (1980-08-01), Mellors
patent: 4362793 (1982-12-01), Bittihn et al.
Kordesch, Karl, Editor, Batteries, vol. 2 Lead-Acid Batteries and Electric Vehicles, Marcel Dekker, Inc., New York, 1977, pp. 5, 56-57, 90-92.
Applied Physics Letters, vol. 38, No. 11, Jun. 1981, New York, R. P. H. Chang et al., "Hydrogen Plasma Etching of GaAs Oxide", pp. 898-899.

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