Method of reducing water spotting and oxide growth on a...

Cleaning and liquid contact with solids – Processes – Using sequentially applied treating agents

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C134S003000, C134S030000, C134S902000

Reexamination Certificate

active

10701383

ABSTRACT:
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

REFERENCES:
patent: 4132567 (1979-01-01), Blackwood
patent: 4197000 (1980-04-01), Blackwood
patent: 4286541 (1981-09-01), Blackwood
patent: 4635666 (1987-01-01), Daley et al.
patent: 4682615 (1987-07-01), Burkman et al.
patent: 4911761 (1990-03-01), McConnell et al.
patent: 4962776 (1990-10-01), Liu et al.
patent: 4984597 (1991-01-01), McConnell et al.
patent: 4997490 (1991-03-01), Vetter et al.
patent: 5069235 (1991-12-01), Vetter et al.
patent: 5078832 (1992-01-01), Tanaka
patent: 5089084 (1992-02-01), Chhabra et al.
patent: 5095927 (1992-03-01), Thompson et al.
patent: 5115576 (1992-05-01), Roberson, Jr. et al.
patent: 5186192 (1993-02-01), Netsu et al.
patent: 5328867 (1994-07-01), Chien et al.
patent: 5355901 (1994-10-01), Mielnik et al.
patent: 5371950 (1994-12-01), Schumacher
patent: 5520744 (1996-05-01), Fujikawa et al.
patent: 5537508 (1996-07-01), Ebbing et al.
patent: 5556479 (1996-09-01), Bran
patent: 5569330 (1996-10-01), Schild et al.
patent: 5653045 (1997-08-01), Ferrell
patent: 5660642 (1997-08-01), Britten
patent: 5681397 (1997-10-01), Li
patent: 5714203 (1998-02-01), Schellenberger et al.
patent: 5715612 (1998-02-01), Schwenkler
patent: 5727578 (1998-03-01), Matthews
patent: 5752532 (1998-05-01), Schwenkler
patent: 5845660 (1998-12-01), Shindo et al.
patent: 5934299 (1999-08-01), Akatsu et al.
patent: 5940985 (1999-08-01), Kamikawa et al.
patent: 5951779 (1999-09-01), Koyanagi et al.
patent: 5958146 (1999-09-01), Mohindra et al.
patent: 6001191 (1999-12-01), Kamikawa et al.
patent: 6004399 (1999-12-01), Wong et al.
patent: 6125863 (2000-10-01), Bexten
patent: 6138690 (2000-10-01), Nakatani
patent: 6143087 (2000-11-01), Walter
patent: 6350322 (2002-02-01), Yates
patent: 6601595 (2003-08-01), Yates
patent: 6607001 (2003-08-01), Yates
patent: 6641677 (2003-11-01), Yates
patent: 6645311 (2003-11-01), Yates
patent: 6656289 (2003-12-01), Yates
patent: 0385536 (1990-05-01), None
patent: 60-103349 (1985-06-01), None
patent: 61-154130 (1986-07-01), None
patent: 4-99025 (1992-03-01), None
patent: 4-152525 (1992-05-01), None
patent: 4-253332 (1992-09-01), None
patent: 4-354128 (1992-12-01), None
patent: 5-47734 (1993-02-01), None
patent: 05-206096 (1993-08-01), None
patent: 06-029278 (1994-02-01), None
Handbook of Semiconductor Wafer Cleaning Technology, editor W. Kern, Noyes Publications, pp. 131-151 and 405-415.
Koppenbrink et al.,Particle Reduction on Silicon Wafers as a Result of Isopropyl Alcohol Vapor Displacement Drying after Wet Processing, Particles on Surfaces 2, editor K. Mittal, Plenum Press. pp. 235-243.
Marra et al.,Physical Principles of Marangoni Drying, Langmuir, vol. 7, No. 11, pp. 2748-2755.
Leenaars et al.,Marangoni Drying: A New Extremely Clean Drying Process, Langmuir, vol. 6, No. 11, pp. 1701-1703.
Wong et al., “Post-Acid Rinse Enhancement Through Megasonic Quickdump Rinsing”, Feb. 1997, pps. 1-7.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of reducing water spotting and oxide growth on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of reducing water spotting and oxide growth on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing water spotting and oxide growth on a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3727336

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.