Method of reducing wafer particles after partial saw using a sup

Details Method of reducing wafer particles after partial saw using a sup Method of reducing wafer particles after partial saw using a sup

1998-05-04

2000-05-16

Chaudhuri, Olik

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having a perfecting coating

H01L 2146

Patent

active

060636963

ABSTRACT:
A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention uses a superhard protective layer such as DLC or TiW deposited over the partially fabricated device prior to a partial-saw. This superhard protective layer reduces the generation of defects in the underlying photoresist layers, and allows a wet chemical HF acid to etch away particles and damage of the underlying oxide edges. A 6% BHF solution can be utilized. The present invention substantially improves the yield of micromechanical devices.

REFERENCES:
patent: 4033027 (1977-07-01), Fair et al.
patent: 5817569 (1998-10-01), Brenner et al.

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