Method of reducing tungsten selectivity to a contact sidewall

Details Method of reducing tungsten selectivity to a contact sidewall Method of reducing tungsten selectivity to a contact sidewall

1987-11-30

1990-10-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437187, 437189, 437200, 148DIG19, H01L 2100, H01L 2102, H01L 2128, H01L 2188

Patent

active

049635115

ABSTRACT:
A method is provided for forming a contact plug (40) in a contact (34) on a semiconductor substrate (30). A dielectric layer (32) is applied to the substrate (30) and then etched to form the contact (34). A layer (38) is then formed over the dielectric (32) and the contact (34). The layer (38) is removed from all surfaces, except the vertical sidewalls (36) within the contact (34). A metal plug (40) is then deposited in the contact (34) forming cup-shaped layers (42). The nonselectivity of the layer (38) allows the metal of plug (40) to be applied to the contact (34) without encroaching upon the substrate (30) or forming bumps on the surface (44) of the dielectric (32).

REFERENCES:
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4597164 (1986-07-01), Havemann
patent: 4720908 (1988-01-01), Wills
patent: 4804560 (1989-02-01), Shioya et al.
Moriya, T., A Planar Metallization Process-Its Application to Tri-Level Aluminum Interconnection, IEDM 83, 1983, pp. 550-553.
Smith, G., Comparison of Two Contact Plug Techniques for use with Planarized Oxide, Jun. 1986, V-MIC Conf., pp. 403-410.
Saraswat, K., Selective CVD of Jungsten for VLSI Technology, VLSI Science and Technology, vol. 84-87, 1984, pp. 409-419.

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