Method of reducing trench aspect ratio

Details Method of reducing trench aspect ratio Method of reducing trench aspect ratio

2005-03-01

2005-03-01

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S435000, C438S400000, C438S404000, C438S421000

Reexamination Certificate

active

06861333

ABSTRACT:
A method of reducing trench aspect ratio. A trench is formed in a substrate. Using HDP-CVD, a conformal first oxide layer is formed on a surface of the trench. A conformal first nitride layer is formed on the first oxide layer. Part of the first nitride layer is removed to cause the first nitride layer to be lower than a top surface of the substrate. Using a BOE solution, the first nitride layer and part of the first oxide layer are removed to leave a remaining first oxide layer on the lower portion of the surface of the trench. Thus, the trench aspect ratio is reduced.

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