Method of reducing the trap density of an oxide film for applica

Fishing – trapping – and vermin destroying

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437247, 437941, H01L 21324

Patent

active

052799816

ABSTRACT:
The present invention is intended to provide a method of fabricating an EEPROM having excellent endurance characteristics. A work obtained by processing a substrate (1) by a wafer processing process including a passivating process and having a tunnel oxide film, an aluminum wiring film and a passivation film is subjected to a low-temperature heat treatment employing a processing temperature of about 250.degree. C. and a processing time on the order of 50 hr in a thermostatic oven (20) in the presence of nitrogen gas. The low-temperature heat treatment reduces trap sites produced in the tunnel oxide film by a plasma CVD process carried out to form the passivation film to repair the tunnel oxide film damaged by the plasma CVD process and to improve the endurance characteristics. The aluminum wiring film is not deteriorated by the low-temperature heat treatment because the low-temperature heat treatment employs a relatively low processing temperature.

REFERENCES:
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patent: 4331709 (1982-05-01), Risch et al.
patent: 4447272 (1984-05-01), Saks
patent: 5010024 (1991-04-01), Allen et al.
patent: 5017979 (1991-05-01), Fujii et al.
patent: 5019533 (1991-05-01), Cuddihy et al.

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