Method of reducing the surface roughness of spin coated...

Details Method of reducing the surface roughness of spin coated... Method of reducing the surface roughness of spin coated...

2007-01-30

2007-01-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S680000, C438S964000, C438S622000, C257SE21008, C257S242000, C257S264000

Reexamination Certificate

active

10676738

ABSTRACT:
According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

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