Method of reducing the surface leakage on a III-V semiconductor

Details Method of reducing the surface leakage on a III-V semiconductor Method of reducing the surface leakage on a III-V semiconductor

1991-04-15

1992-04-07

Maples, John S.

Fishing, trapping, and vermin destroying

437228, 148 333, H01L 2100

Patent

active

H00010413

ABSTRACT:
The surface leakage on a III-V semiconductor is reduced by selectively grng a mixed oxide on the surface of the semiconductor to passivate the semiconductor and reduce the surface leakage.

REFERENCES:
patent: 5021365 (1991-06-01), Kirchner et al.

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