Method of reducing the current gain of an inherent bipolar trans

Details Method of reducing the current gain of an inherent bipolar trans Method of reducing the current gain of an inherent bipolar trans

1984-08-13

1986-10-28

James, Andrew J.

357 234, 357 91, 357 64, H01L 2974, H01L 2978, H01L 29167

Patent

active

046202110

ABSTRACT:
Reduction in the forward current gain of an inherent bipolar transistor in an insulated-gate semiconductor device such as an IGT or an IGFET is achieved by implantation of selected ions into the semiconductor material of such device. The ions, which create defects in the implanted region constituting current carrier recombination centers, form a layer with a peak concentration situated in proximity to the emitter-base junction of the inherent bipolar transistor. The layer of ions is of small thickness, whereby the resulting increase in the respective sheet resistances of the emitter and base layers to either side of the emitter-base junction is minimized.

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